Companies manufacturing electronic devices incorporate UV LED components to produce innovative and effective products. In this work, we have demonstrated vertical AlGaN deep UV LEDs on Si. Such devices are made on a special AlN buffer layer that is formed with the assistance of a nanowire-based template. Therefore, this work enables a practical path for high performance vertical semiconductor deep UV LEDs. Deep UV light sources play a critical role in our everyday life for a wide range of applications in disinfection, UV curing in the production of any personal electronic devices, and bio-chemical sensing.
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There are also LEDs that include a small, current limiting resistor. If you look closely at the image below, there is a small, black square IC on the post to limit the current on these types of LEDs. There are different chipsets used to control an individual LED that is chained together. The bigger square IC on the right controls the colors individually.
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When a forward bias is applied, electrons in the n-type region are pushed toward the p-type region and, likewise, holes in the p-type material are pushed in the opposite direction toward the n-type material. At the junction between the p-type and n-type materials, the electrons and holes will recombine and each recombination event will produce a quantum of energy that is an intrinsic property of the semiconductor where the recombination occurs. A common question companies ask when exploring UVC LEDs for disinfection applications relates to how UVC LEDs actually work.
An alternative path for vertical AlGaN deep UV LEDs is to use nanowire structures38,39. However, the fabrication of AlGaN nanowire deep UV LEDs is one remaining issue. This is mainly due to the presence of gaps amongst nanowires.